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Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD1821 2.10.1 Unit: mm q q q High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.425 1.250.1 0.425 0.65 1 2.00.2 1.30.1 0.65 3 2 0.90.1 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg -150 -150 -5 -100 -50 150 150 -55 ~ +150 V V V mA mA mW C C 0.70.1 0 to 0.1 0.20.1 1:Base 2:Emitter 3:Collector EIAJ:SC-70 S-Mini Type Package Marking symbol : I s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions VCB = -100V, IE = 0 IC = -100A, IB = 0 IE = -10A, IC = 0 VCE = -5V, IC = -10mA IC = -30mA, IB = -3mA VCB = -10V, IE = 10mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz VCE = -10V, IC = -1mA, GV= 80dB, Rg = 100k, Function = FLAT 200 4 150 -150 -5 130 450 -1 V MHz pF mV min typ max -1 Unit A V V *h FE Rank classification Rank hFE Marking Symbol R 130 ~ 220 IR S 185 ~ 330 IS T 260 ~ 450 IT 0.15-0.05 +0.1 Parameter Symbol Ratings Unit 0.2 s Absolute Maximum Ratings (Ta=25C) 0.3-0 +0.1 1 Transistor PC -- Ta 240 -100 Ta=25C -90 200 IB=-10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -100 25C Ta=75C -80 2SB1220 IC -- VCE -120 VCE=-5V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 -70 -60 -50 -40 -30 -20 -10 120 Collector current IC (mA) -80 -25C -60 80 -2mA -40 60 -1mA -20 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C -25C IC/IB=10 600 hFE -- IC 250 VCE=-5V 225 500 fT -- I E VCB=-10V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -10 -30 -100 200 175 150 125 100 75 50 25 400 Ta=75C 300 25C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 200 100 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 10 Collector output capacitance Cob (pF) 9 8 7 6 5 4 3 2 1 0 -1 IE=0 f=1MHz Ta=25C -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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